Power transistor device having ultra deep increased concentration region
US5766966A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 18, 1996 |
| Grant date | Jun 16, 1998 |
| Priority date | — |
| Expiry date | Jun 18, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/904
Abstract
A cellular insulated gate bipolar transistor ("IGBT") device employs increased concentration in the active region between spaced bases to a depth greater than the depth of the base regions. The implant dose which is the source of the increased concentration is about 3.5.times.10.sup.12 atoms per centimeter squared and is driven for about 10 hours at 1175.degree. C. Lifetime is reduced by an increased radiation dose to reduce switching loss without reducing breakdown voltage or increasing forward voltage, drop above previous levels. The increased concentration region permits a reduction in the spacing between bases and provides a region of low localized bipolar gain, increasing the device latch current. The avalanche energy which the device can successfully absorb while turning off an inductive load is significantly increased. The very deep increased conduction region is formed before the body and source regions in a novel process for making the new junction pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.