Magnetoresistive memory using large fractions of memory cell films for data storage
US5768180A · kind A · utility
8Cited by
10References
22Claims
0Family size
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Key dates
| Filing date | Jan 28, 1997 |
| Grant date | Jun 16, 1998 |
| Priority date | — |
| Expiry date | Jan 28, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1673
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A digital memory having a plurality of locations where selectively coincident currents can be selected to flow in a pair of wordline structures, or with a wordline structure paired with a composite line structure (and possibly a bit line structure), to continue an existing, or switch to an opposite, edge magnetization state in a composite line structure or, alternatively, continue or switch a magnetization state in a storage film cell used to magnetically bias such a composite line structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.