Nonvolatile Electronics, Incorporated
21Patents
0Active
21Granted
35Portfolio score
Filing activity: Nov 4, 1991 → Nov 24, 1999
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5831426A | Magnetic current sensor | Physics | 109 | Expired |
| US5617071A | Magnetoresistive structure comprising ferromagnetic thin films and intermediate alloy layer having magnetic concentrator and shielding permeable masses | Physics | 65 | Expired |
| US5251170A | Offset magnetoresistive memory structures | Electricity | 62 | Expired |
| US6300617A | Magnetic digital signal coupler having selected/reversal directions of magnetization | Electricity | 60 | Expired |
| US5892708A | Magnetoresistive memory using large fraction of memory cell films for data storage | Physics | 53 | Expired |
| US5420819A | Method for sensing data in a magnetoresistive memory using large fractions of memory cell films for data storage | Physics | 53 | Expired |
| US5424236A | Method for forming offset magnetoresistive memory structures | Electricity | 48 | Expired |
| US6021065A | Spin dependent tunneling memory | Electricity | 46 | Expired |
| US5569544A | Magnetoresistive structure comprising ferromagnetic thin films and intermediate layers of less than 30 angstroms formed of alloys having immiscible components | Emerging Cross-Sectional Technologies | 42 | Expired |
| US5595830A | Magnetoresistive structure with alloy layer having two substantially immiscible components | Emerging Cross-Sectional Technologies | 40 | Expired |
| US6072382A | Spin dependent tunneling sensor | Physics | 27 | Expired |
| US5636159A | Magnetoresistive memory using large fractions of memory cell films for data storage | Physics | 26 | Expired |
| US6147900A | Spin dependent tunneling memory | Electricity | 21 | Expired |
| US6252390A | Magnetically coupled signal isolator | Physics | 20 | Expired |
| US5966322A | Giant magnetoresistive effect memory cell | Electricity | 19 | Expired |
| US5729137A | Magnetic field sensors individualized field reducers | Physics | 19 | Expired |
| US5949707A | Giant magnetoresistive effect memory cell | Electricity | 19 | Expired |
| US6168860A | Magnetic structure with stratified layers | Emerging Cross-Sectional Technologies | 15 | Expired |
| US6275411A | Spin dependent tunneling memory | Physics | 15 | Expired |
| US5768180A | Magnetoresistive memory using large fractions of memory cell films for data storage | Physics | 8 | Expired |
| US6340886B1 | Magnetic field sensor with a plurality of magnetoresistive thin-film layers having an end at a common surface | Physics | 5 | Expired |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.