Ferroelectric nonvolatile dynamic random access memory device
US5768182A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 9, 1995 |
| Grant date | Jun 16, 1998 |
| Priority date | — |
| Expiry date | May 9, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/30
Abstract
A dynamic random access memory cell is described which can operate either in volatile or nonvolatile mode. When operating in a volatile mode, the memory cell operates in the same manner as a conventional dynamic random access memory cell, that is, with charge being stored and discharged from a capacitor in the memory cell. Upon receipt of a suitable signal, however, the cell can be switched to a nonvolatile mode of operation. In this mode of operation, a pulse applied to the capacitor can place a ferroelectric film in the desired polarization state to represent the binary data. The ferroelectric film will hold its polarization state until the data is recalled and the cell reverts to operating in a volatile mode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.