Multi-layer magnetic memory cells with improved switching characteristics
US5768183A · kind A · utility
38Cited by
5References
13Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 25, 1996 |
| Grant date | Jun 16, 1998 |
| Priority date | — |
| Expiry date | Sep 25, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5615
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A plurality of layers of magnetic material are stacked in parallel, overlying relationship and separated by layers of non-magnetic material so as to form a multi-layer magnetic memory cell. The width of the cell is less than a width of magnetic domain walls within the magnetic layers so that magnetic vectors in the magnetic layers point along a length of the magnetic layers, and the ratio of the length to the width of the magnetic memory cell is in a range of 1.5 to 10. The magnetic layers are antiferromagnetically coupled when the ratio is less than 4 and ferromagnetically coupled when the ratio is greater than 4.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.