Method for forming semiconductor structure using modulation doped silicate glasses
US5770469A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 29, 1995 |
| Grant date | Jun 23, 1998 |
| Priority date | — |
| Expiry date | Dec 29, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/982
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor structure utilizing doped silicate glass on a substrate of a wafer. The method includes the step forming a modulation doped silicate glass structure over a first layer of the wafer. The modulation doped silicate glass structure is formed by depositing at least two alternating layers of heavily-doped silicate glass and lightly-doped silicate glass over the first layer. Both the heavily-doped silicate glass and lightly-doped silicate glass layers may comprise glass doped with both a first dopant and a second dopant. The first dopant may represent, for example, phosphorous, and the second dopant may represent, for example, boron.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.