Apparatus and method for detecting over-programming condition in multistate memory device
US5771346A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 24, 1996 |
| Grant date | Jun 23, 1998 |
| Priority date | — |
| Expiry date | Oct 24, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5643
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An apparatus and method for detecting an over-programming condition in a multistate memory cell. The invention is also directed to identifying the over-programmed cells and providing an alternate location at which to write the data intended for the over-programmed cell. An over-programmed state detection circuit generates an error signal when the data contained in a multistate memory cell is found to be over-programmed relative to its intended programming (threshold voltage level) state. Upon detection of an over-programmed cell, the programming operation of the memory system is modified to discontinue further programming attempts on the cell. The over-programmed state detection circuit is also used to assist in correcting for the over-programming state, permitting the programming error to be compensated for by the memory system.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.