Patent · US Expired

Method of forming a doped field emitter array

US5772488A · kind A · utility

10Cited by
8References
14Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 16, 1995
Grant dateJun 30, 1998
Priority date
Expiry dateOct 16, 2015

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J2329/00
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

According to one aspect of the invention, a field emission display is provided comprising: an anode; a phosphor screen located on the anode; a cathode; an evacuated space between the anode and the cathode; an emitter located on the cathode opposite the phosphor; wherein the emitter comprises an electropositive element both in a body of the emitter and on a surface of the emitter. According to another aspect of the invention a process for manufacturing an FED is provided comprising the steps of: forming an emitter comprising an electropositive element in the body of the tip; positioning the emitter in opposing relation to a phosphor display screen; creating an evacuated space between the emitter tip and the phosphor display screen; and causing the electropositive element to migrate to the an emission surface of the emitter.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.