Behnam Moradi
40Patents
7h-index
16Co-inventors
62Inventor score
Filing activity: Oct 16, 1995 → Oct 8, 2013
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5880502A | Low and high voltage CMOS devices and process for fabricating same | Electricity | 32 | Expired |
| US5656886A | Technique to improve uniformity of large area field emission displays | Electricity | 28 | Expired |
| US6015323A | Field emission display cathode assembly government rights | Electricity | 18 | Expired |
| US6028322A | Double field oxide in field emission display and method | Electricity | 17 | Expired |
| US6096589A | Low and high voltage CMOS devices and process for fabricating same | Electricity | 16 | Expired |
| US5772488A | Method of forming a doped field emitter array | Electricity | 10 | Expired |
| US5956611A | Field emission displays with reduced light leakage | Electricity | 9 | Expired |
| US6181308A | Light-insensitive resistor for current-limiting of field emission displays | Electricity | 7 | Expired |
| US6323587A | Titanium silicide nitride emitters and method | Electricity | 6 | Expired |
| US6583441B2 | Capacitor constructions comprising a nitrogen-containing layer over a rugged polysilicon layer | Emerging Cross-Sectional Technologies | 5 | Expired |
| US6057638A | Low work function emitters and method for production of FED's | Electricity | 5 | Expired |
| US6278229A | Field emission displays having a light-blocking layer in the extraction grid | Electricity | 5 | Expired |
| US7824994B2 | Method of forming memory devices by performing halogen ion implantation and diffusion processes | Electricity | 5 | Active |
| US6515414B1 | Low work function emitters and method for production of fed's | Electricity | 4 | Expired |
| US6607965B2 | Methods of forming capacitors | Emerging Cross-Sectional Technologies | 4 | Expired |
| US6228667A | Field emission displays with reduced light leakage | Electricity | 3 | Expired |
| US6362038B1 | Low and high voltage CMOS devices and process for fabricating same | Electricity | 3 | Expired |
| US6509686B1 | Field emission display cathode assembly with gate buffer layer | Electricity | 3 | Expired |
| US6692323B1 | Structure and method to enhance field emission in field emitter device | Electricity | 3 | Expired |
| US6436788B1 | Field emission display having reduced optical sensitivity and method | Electricity | 3 | Expired |
| US8580645B2 | Memory devices and methods of forming memory devices | Electricity | 3 | Active |
| US6417617B2 | Titanium silicide nitride emitters and method | Electricity | 3 | Expired |
| US6271632A | Field emission display having reduced optical sensitivity and method | Electricity | 2 | Expired |
| US6353285B1 | Field emission display having reduced optical sensitivity and method | Electricity | 1 | Expired |
| US6507329B2 | Light-insensitive resistor for current-limiting of field emission displays | Electricity | 1 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.