Method of fabricating a short-channel MOS device
US5773348A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | May 21, 1997 |
| Grant date | Jun 30, 1998 |
| Priority date | — |
| Expiry date | May 21, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
Abstract
A method of fabricating a short-channel MOS device on a substrate is provided. First, stacked pad oxide/nitride layers are formed on the substrate. Then a patterned photoresist film is formed on the planned gate region which covers the gate region and its sidewall spacers. A LPD (Liquid Phase Deposition) oxide is selectively deposited on the pad nitride layer by a liquid phase deposition process, except on the pre-formed photoresist film. After removing the photoresist layer nitride spacers leaning against the LPD oxide layer are formed by lithography and etching. The width of the nitride spacers controls the channel length of the MOS device. After forming a gate structure laterally sandwiched by the nitride spacers on the exposed substrate, a two-stage salicide process, which can form shallow junctions and self-aligned contacts on the source and the drain, is performed to complete the MOS device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.