Simplified process for fabricating flash eeprom cells
US5776811A · kind A · utility
19Cited by
4References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 4, 1996 |
| Grant date | Jul 7, 1998 |
| Priority date | — |
| Expiry date | Jan 4, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/685
Abstract
A simplified fabrication procedure for making flash EEPROM memory cells is disclosed. The method comprises performing a double-diffuse (deep) junction implant after the shallow source/drain of the memory cell have been implanted and formed. A high energy double-diffuse implant is used to replace separate, individual implant and diffusion steps which results in a memory cell having, less damage to its substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.