Jian Chen
20Patents
11h-index
19Co-inventors
68Inventor score
Filing activity: Dec 1, 1993 → Sep 29, 2006
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5814853A | Sourceless floating gate memory device and method of storing data | Electricity | 115 | Expired |
| US5598369A | Flash EEPROM array with floating substrate erase operation | Electricity | 59 | Expired |
| US5561620A | Flash EEPROM array with floating substrate erase operation | Electricity | 46 | Expired |
| US6248629A | Process for fabricating a flash memory device | Electricity | 26 | Expired |
| US5482881A | Method of making flash EEPROM memory with reduced column leakage current | Electricity | 26 | Expired |
| US5650964A | Method of inhibiting degradation of ultra short channel charge-carrying devices during discharge | Physics | 22 | Expired |
| US5521867A | Adjustable threshold voltage conversion circuit | Physics | 20 | Expired |
| US5776811A | Simplified process for fabricating flash eeprom cells | Electricity | 19 | Expired |
| US5652447A | Flash EEPROM memory with reduced column leakage current | Electricity | 15 | Expired |
| US5576991A | Multistepped threshold convergence for a flash memory array | Physics | 15 | Expired |
| US5579261A | Reduced column leakage during programming for a flash memory array | Physics | 11 | Expired |
| US5541875A | High energy buried layer implant to provide a low resistance p-well in a flash EPROM array | Electricity | 11 | Expired |
| US5793249A | System for providing tight program/erase speeds that are insensitive to process variations | Physics | 11 | Expired |
| US5854108A | Method and system for providing a double diffuse implant junction in a flash device | Electricity | 10 | Expired |
| US5608672A | Correction method leading to a uniform threshold voltage distribution for a flash eprom | Physics | 9 | Expired |
| US7473623B2 | Providing stress uniformity in a semiconductor device | Electricity | 7 | Active |
| US7793240B2 | Compensating for layout dimension effects in semiconductor device modeling | Physics | 3 | Active |
| US5946234A | Constant current source programming of electrically programmable memory arrays | Physics | 1 | Expired |
| US6011718A | Current source programming of electrically programmable memory arrays | Physics | 0 | Expired |
| US5981994A | Method and semiconductor circuit for maintaining integrity of field threshold voltage requirements | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.