Method for forming metal plug
US5776833A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 4, 1996 |
| Grant date | Jul 7, 1998 |
| Priority date | — |
| Expiry date | Sep 4, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76885
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a metal plug is provided. The method includes: a) forming a metal contact window in a substrate having an oxide layer; b) forming a barrier layer over a top surface of the oxide layer and a wall defining the metal contact window; c) forming a metal layer covering the barrier layer and filling up the metal contact window; d) removing a portion of the metal layer located above the barrier layer covering the top surface of the oxide layer by a chemical mechanical polishing method; and e) removing the barrier layer covering the top surface of the oxide layer by an etching method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.