Method and mask design to minimize reflective notching effects
US5780208A · kind A · utility
12Cited by
7References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 17, 1996 |
| Grant date | Jul 14, 1998 |
| Priority date | — |
| Expiry date | Oct 17, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/50
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method is described for reducing light scatter in lithographically producing a resist feature wherein the dosage of light beyond the immediate periphery of the desired feature is subjected to a lower dosage of light than is required to properly define the edges of the resist feature. In addition, a mask is described which is partially opaque in those areas remote from the area delineating the desired feature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.