Low imprint ferroelectric material for long retention memory and method of making the same
US5784310A · kind A · utility
23Cited by
10References
8Claims
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Key dates
| Filing date | Mar 3, 1997 |
| Grant date | Jul 21, 1998 |
| Priority date | — |
| Expiry date | Mar 3, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S428/901
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Thin film ferroelectric materials for use in integrated memory circuits, such as FERAMS and the like, contain strontium bismuth niobium tantalate having an empirical formula SrBi.sub.2+E (Nb.sub.X Ta.sub.2-X)O.sub.9+3E/2, wherein E is a number representing an excess amount of bismuth ranging from zero to 2; and X is a number representing an excess amount of niobium ranging from 0.01 to 0.9. The thin films demonstrate an exceptional resistance to polarization imprinting when challenged with unidirectional voltage pulses.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.