Narayan Solayappan
33Patents
15h-index
17Co-inventors
74Inventor score
Filing activity: Sep 16, 1996 → Apr 26, 2006
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6110531A | Method and apparatus for preparing integrated circuit thin films by chemical vapor deposition | Electricity | 422 | Expired |
| US6511718B1 | Method and apparatus for fabrication of thin films by chemical vapor deposition | Electricity | 110 | Expired |
| US7075134B2 | Ferroelectric and high dielectric constant integrated circuit capacitors with three-dimensional orientation for high-density memories, and method of making the same | Electricity | 46 | Expired |
| US5962069A | Process for fabricating layered superlattice materials and AB0.sub.3 type metal oxides without exposure to oxygen at high temperatures | Electricity | 42 | Expired |
| US6495878B1 | Interlayer oxide containing thin films for high dielectric constant application | Electricity | 37 | Expired |
| US6258733A | Method and apparatus for misted liquid source deposition of thin film with reduced mist particle size | Electricity | 35 | Expired |
| US6104049A | Ferroelectric memory with ferroelectric thin film having thickness of 90 nanometers or less, and method of making same | Electricity | 30 | Expired |
| US6171934A | Recovery of electronic properties in process-damaged ferroelectrics by voltage-cycling | Electricity | 29 | Expired |
| US6326315A | Low temperature rapid ramping anneal method for fabricating layered superlattice materials and making electronic devices including same | Electricity | 29 | Expired |
| US6787181B2 | Chemical vapor deposition method of making layered superlattice materials using trimethylbismuth | Electricity | 26 | Expired |
| US6781184B2 | Barrier layers for protecting metal oxides from hydrogen degradation | Electricity | 25 | Expired |
| US5784310A | Low imprint ferroelectric material for long retention memory and method of making the same | Emerging Cross-Sectional Technologies | 23 | Expired |
| US6322849A | Recovery of electronic properties in hydrogen-damaged ferroelectrics by low-temperature annealing in an inert gas | Electricity | 23 | Expired |
| US5843516A | Liquid source formation of thin films using hexamethyl-disilazane | Electricity | 21 | Expired |
| US6831313B2 | Ferroelectric composite material, method of making same and memory utilizing same | Electricity | 21 | Expired |
| US5997642A | Method and apparatus for misted deposition of integrated circuit quality thin films | Electricity | 15 | Expired |
| US5849071A | Liquid source formation of thin films using hexamethyl-disilazane | Electricity | 14 | Expired |
| US6541279B2 | Method for forming an integrated circuit | Electricity | 14 | Expired |
| US6245580A | Low temperature process for fabricating layered superlattice materials and making electronic devices including same | Electricity | 13 | Expired |
| US6116184A | Method and apparatus for misted liquid source deposition of thin film with reduced mist particle size | Electricity | 13 | Expired |
| US6559469B1 | Ferroelectric and high dielectric constant transistors | Electricity | 12 | Expired |
| US6562678B1 | Chemical vapor deposition process for fabricating layered superlattice materials | Emerging Cross-Sectional Technologies | 8 | Expired |
| US6437380B1 | Ferroelectric device with bismuth tantalate capping layer and method of making same | Electricity | 8 | Expired |
| US5883828A | Low imprint ferroelectric material for long retention memory and method of making the same | Emerging Cross-Sectional Technologies | 8 | Expired |
| US6582972B1 | Low temperature oxidizing method of making a layered superlattice material | Electricity | 8 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.