Method for setting the threshold voltage of a reference memory cell
US5784314A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 12, 1996 |
| Grant date | Jul 21, 1998 |
| Priority date | — |
| Expiry date | Jul 12, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2029/5006
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for setting the threshold voltage of a reference memory cell of a memory device is described, the reference memory cell being used as a reference current generator for generating a reference current which is compared by a sensing circuit of the memory device with currents sunk by memory cells to be sensed, belonging to a memory matrix of the memory device. The method comprises a first step in which the reference memory cell is submitted to a change in its threshold voltage, and a second step in which the threshold voltage of the reference memory cell is verified. The second step provides for performing a sensing of the reference memory cell using a memory cell with known threshold voltage belonging to the memory matrix as a reference current generator for generating a current which is compared by the sensing circuit with the current sunk by the reference memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.