Photoresist removal process using heated solvent vapor
US5785875A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 13, 1996 |
| Grant date | Jul 28, 1998 |
| Priority date | — |
| Expiry date | Feb 13, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/422
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a method for the removal of a layer of photoresist material from a surface of a film located on an in-process integrated circuit wafer subsequent to etching the film through the photoresist material layer. The method disclosed herein comprises first, applying a layer of the photoresist material layer over the film, then patterning the photoresist material, etching the film, and finally, removing the photoresist material. The etch is preferably a wet etch conducted in a closed reaction chamber. The photoresist material removal can be conducted within the same closed reaction chamber as that in which the etch was conducted. Photoresist material removal is achieved by exposing the photoresist material to heated solvent vapors. One particularly advantageous vapor solvent comprises isopropyl alcohol. Subsequent to the photoresist material removal, the film is preferably subjected to cleaning, rinsing, and drying methods, all of which can be conducted within the same closed reaction chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.