Dry etching method
US5785877A · kind A · utility
19Cited by
15References
11Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Feb 11, 1997 |
| Grant date | Jul 28, 1998 |
| Priority date | — |
| Expiry date | Feb 11, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/909
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An object to be etched is loaded in a low-pressure vapor phase processing chamber, and then an etching gas obtained by adding a small amount of additive gas of oxygen or additive gas at least containing oxygen to a reaction gas used for etching is fed to the low-pressure vapor phase processing chamber so as to suppress a reaction between the wall of the low-pressure vapor phase processing chamber and the reaction gas. In this state, the object to be etched is dry-etched with the etching gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.