Method of forming shallow junctions by entrapment of interstitial atoms
US5789310A · kind A · utility
16Cited by
7References
3Claims
0Family size
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Key dates
| Filing date | Dec 10, 1996 |
| Grant date | Aug 4, 1998 |
| Priority date | — |
| Expiry date | Dec 10, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/151
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In the formation of shallow depth junctions, atoms of inner elements, such as helium, argon, xenon or krypton are implanted at a chosen energy and concentration to create microvoids in the epitaxial layer at a chosen depth. Then, upon implantation of boron ions, the implantation of which creates interstitial silicon atoms, during an anneal step the interstitial atoms fill the voids and determine the junction depth.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.