Plating of noble metal electrodes for DRAM and FRAM

US5789320A · kind A · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Panayotis Andricacos · Ossining, US
• James H. Comfort · New City, US
• Alfred Grill · White Plains, US
• David E. Kotecki · Hopewell Junction, US
• Vishnubhai V. Patel · Yorktown Heights, US
• Katherine L. Saenger · Ossining, US
• Alejandro G. Schrott · New York, US

Key dates

• Filing date: Apr 23, 1996
• Grant date: Aug 4, 1998
• Expiry date: Apr 23, 2016

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/692

Abstract

Noble metal plating on a preexisting seed layer is used in the fabrication of electrodes for DRAM and FRAM. The plating may be spatially selective or nonselective. In the nonselective case, a blanket film is first plated and then patterned after deposition by spatially selective material removal. In the selective case, the plated deposits are either selectively grown in lithographically defined areas by a through-mask plating technique, or selectively grown as a conformal coating on the exposed regions of a preexisting electrode structure. A diamond-like carbon mask can be used in the plating process. A self-aligned process is disclosed for selectively coating insulators in a through-mask process.