High density plasma physical vapor deposition
US5792522A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 18, 1996 |
| Grant date | Aug 11, 1998 |
| Priority date | — |
| Expiry date | Sep 18, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3325
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for forming a material in an opening on a substrate, such as a wafer, using an electron cyclotron resonance-assisted high density plasma physical vapor deposition system. The method comprises the steps of: maintaining a pressure in the range of approximately 1 mTorr to approximately 6 mTorr; generating a plasma by providing a microwave power in the range of approximately 3 kilowatts (kW) to approximately 5 kW; applying a direct current (DC) voltage to a target source of the material in the range of approximately (negative) -600 volts to approximately -1000 volts; providing a current of a predetermined amount to a first electromagnet; and providing a current to a second electromagnet that is less than said predetermined amount, wherein said second electromagnet is disposed below said first electromagnet; and forming a layer of the material in the opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.