Photoresist strip method
US5792672A · kind A · utility
20Cited by
1References
42Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 20, 1996 |
| Grant date | Aug 11, 1998 |
| Priority date | — |
| Expiry date | Mar 20, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/427
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved method for removing a photoresist mask from an etched aluminum pattern after etching the pattern in a chlorine containing plasma has been created. The method is a two step process, in which a first stripping step is in a plasma containing O.sub.2 and H.sub.2 O and a second stripping step is in a plasma containing O.sub.2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.