Three-dimensional device layout having a trench capacitor

US5792685A · kind A · utility

Assignees

• Siemens Aktiengesellschaft · DE
• International Business Machines Corporation · US

Inventors

• Erwin Hammerl · Stormville, US
• Jack A. Mandelman · Stormville, US
• Bernhard Poschenrieder · Saint-Cloud, FR
• Alvin P. Short · Chester, US
• Radhika Srinivasan · Mahwah, US
• Reinhard Stengl · Stadtbergen, DE
• Herbert L. Ho · New Windsor, US

Key dates

• Filing date: Jun 21, 1996
• Grant date: Aug 11, 1998
• Expiry date: Jun 21, 2016

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/373

Abstract

Method for forming three-dimensional device structures comprising a second device formed over a first device is disclosed. A layer having a single crystalline top surface is formed above the first device to provide the base for forming the active area of the second device.