Custom laser conductor linkage for integrated circuits
US5793095A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Aug 21, 1996 |
| Grant date | Aug 11, 1998 |
| Priority date | — |
| Expiry date | Aug 21, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit includes a substrate with doped regions, a patterned polysilicon layer defining contacts and local interconnects, a submetal dielectric, a two-metal layer metal interconnect structure with an intermetal dielectric layer, and a passivation layer. Like the dielectric layers, the passivation layer is optically transparent, thick, and planarized. Because of this, laser energy can be directed through the passivation layer to fuse two conductors of the top metal layer without delaminating the passivation layer. In addition, laser energy is directed through the passivation layer and the intermetal dielectric to fuse pairs of conductors in the lower metal layer. Thus, the present invention provides for reliable convenient circuit modification without disturbing dielectric and exposing metal features to moisture and other contaminants.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.