Patent · US Expired

Simple repair method for phase shifting masks

US5795685A · kind A · utility

74Cited by
10References
47Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 14, 1997
Grant dateAug 18, 1998
Priority date
Expiry dateJan 14, 2017

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG03F1/72
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A method and apparatus for correcting defects in a phase shift mask to be used in photolithography. More specifically, the method of the invention includes creating a second repair mask which contains phase shifters. Regions surrounding the defects on the first mask are made opaque. The design circuitry located in these defective regions is copied onto the second mask. During a second exposure the design circuitry is placed onto the semiconductor wafer. Therefore, this method and apparatus provides an inexpensive solution to a difficult problem.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.