Electroless plating bath used for forming a wiring of a semiconductor device, and method of forming a wiring of a semiconductor device
US5795828A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 3, 1996 |
| Grant date | Aug 18, 1998 |
| Priority date | — |
| Expiry date | Jul 3, 2016 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C18/44
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A contact hole and a wiring groove are formed in an insulating layer formed on a semiconductor substrate. A silver layer is formed inside of the contact hole and the wiring groove and on the insulating layer with the use of an electroless plating bath comprising: silver nitrate containing silver ions; tartaric acid serving as a reducing agent of the silver ions; ethylenediamine serving as a complexing agent of the silver ions; and metallic ions of tetramethylammoniumhydroxide serving as a pH control agent. Then, the silver layer on the insulating layer is removed by a chemical and mechanical polishing method such that an embedded wiring is formed in each of the contact hole and the wiring groove.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.