Etching method for use in fabrication of semiconductor devices
US5798303A · kind A · utility
25Cited by
15References
30Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 5, 1996 |
| Grant date | Aug 25, 1998 |
| Priority date | — |
| Expiry date | Sep 5, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/963
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An etching method includes providing a first surface and a second surface with the second surface lying substantially vertical to the first surface. A material is provided over at least a portion of the first and second surface. The material is anisotropically etched from at least the first surface resulting in a blocking material formed over at least a portion of the material on the second surface. The blocking material is removed and the portion of the material formed over the second surface is isotropically etched. The blocking material may be a polymer material, and the removing step may include oxidizing the polymer material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.