IGBT with integrated control
US5798538A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 17, 1995 |
| Grant date | Aug 25, 1998 |
| Priority date | — |
| Expiry date | Nov 17, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
Abstract
A monolithic IGBT and control circuit therefor are integrated into a common chip. The IGBT is formed in a first area of the chip and the control circuit is formed in a second laterally spaced area and in a P well. Means are provided to prevent hole injection from the P.sup.+ substrate into the P well during IGBT operation. The means includes a sufficient spacing between the areas; a P.sup.+ collection region between the areas or an N.sup.+ diffusion between the areas which is connected to the P.sup.+ substrate. The areas are surrounded by a common field termination structure which, however, leaves a small surface bridge between the two areas. Control conductors from the control area to the IGBT area cross over the narrow area, and not over the field terminations. A lateral PNP transistor which is integrated in the chip and is external of the IGBT area is connected to the central N.sup.+ diffusion between IGBT and control areas and permits its connection to the P type substrate only when the IGBT area conducts.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.