High voltage power integrated circuit with level shift operation and without metal crossover
US5801418A · kind A · utility
35Cited by
1References
67Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 3, 1997 |
| Grant date | Sep 1, 1998 |
| Priority date | — |
| Expiry date | Feb 3, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/105
Abstract
Level shift devices are formed in the high voltage termination region of an integrated circuit. The level shift devices provide a connection between the higher voltage, floating circuit and a ground referenced lower voltage circuit. The structure of the level shift devices eliminates the need for a high voltage connector to cross over the low voltage connector.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.