MOS gated semiconductor device with source metal covering the active gate
US5801431A · kind A · utility
14Cited by
2References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 20, 1997 |
| Grant date | Sep 1, 1998 |
| Priority date | — |
| Expiry date | Feb 20, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An MOS gated semiconductor device includes a metal source contact electrode which extends across the top of a overlaying oxide layer that is formed atop the gate electrode. The source metal thus extends over the channel region to provide a physical metal shield against the migration of ionic contaminants that may be present in the plastic device housing, particularly during high temperature operation. The metal shield substantially improves the device characteristics under high temperature bias conditions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.