Low temperature aluminum alloy plug technology
US5804251A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 25, 1997 |
| Grant date | Sep 8, 1998 |
| Priority date | — |
| Expiry date | Apr 25, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76877
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming an aluminum or aluminum alloy plug in the fabrication of a semiconductor device. An opening is formed in a wafer. A titanium wetting layer is then deposited over the wafer and lines the sidewalls and bottom of the opening. The opening is then filled with aluminum in two steps, both steps being performed at approximately the same temperature. The first aluminum deposition step is performed at a first (slower) deposition rate. The second aluminum deposition step is performed at the same temperature as the first deposition step but at a different (or second/faster) deposition rate until the opening is completely filled.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.