Ferroelectric based capacitor cell for use in memory systems
US5804850A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 16, 1996 |
| Grant date | Sep 8, 1998 |
| Priority date | — |
| Expiry date | Apr 16, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/696
Abstract
A ferroelectric based capacitor structure and method for making the same. The capacitor includes a bottom electrode having a layer of Pt in contact with a first layer of an ohmic material. The capacitor dielectric is constructed from a layer of lead zirconium titanate doped with an element having an oxidation state greater than +4. The top electrode of the capacitor is constructed from a second layer of ohmic material in contact with a layer of Pt. The preferred ohmic material is LSCO; although RuO.sub.2 may also be utilized. The capacitor is preferably constructed over the drain of an FET such that the bottom electrode of the capacitor is connected to the drain of the FET. The resulting capacitor structure has both low imprint and low fatigue.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.