Semiconductor laser
US5805628A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 23, 1996 |
| Grant date | Sep 8, 1998 |
| Priority date | — |
| Expiry date | Oct 23, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3432
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser device includes a semiconductor substrate of a first conductivity type; opposed light emitting facets; a double heterojunction structure disposed on the semiconductor substrate and including an optical waveguide that extends between the facets and comprises a light emitting region and a lens region, the lens region being between the light emitting region and one of the facets, the double heterojunction structure including a plurality of AlGaAs series compound semiconductor layers which are thicker in the light emitting region than in the lens region; and a current blocking structure disposed on both sides of the double heterojunction structure and including a lower AlGaAs series compound semiconductor layer of the first conductivity type, an intermediate AlGaAs series compound semiconductor layer of a second conductivity type, opposite the first conductivity type, and an upper AlGaAs series compound semiconductor layer of the first conductivity type. Therefore, a reactive current that does not contribute to laser oscillation is prevented from flowing through the current blocking structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.