Lithographic patterning method and mask set therefor with light field trim mask
US5807649A · kind A · utility
129Cited by
11References
20Claims
0Family size
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Key dates
| Filing date | Oct 31, 1996 |
| Grant date | Sep 15, 1998 |
| Priority date | — |
| Expiry date | Oct 31, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70283
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A lithographic patterning method and mask set using a phase shift trim mask having mask dimensions increased in block size so as to remove previous exposure defects.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.