Semiconductor device with recrystallized active area
US5808321A · kind A · utility
104Cited by
8References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 7, 1994 |
| Grant date | Sep 15, 1998 |
| Priority date | — |
| Expiry date | Jun 7, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0225
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One kind or plural kinds of elements selected from a groups III, IV or V elements are introduced in an amorphous silicon film, and then crystallized by heating at 600.degree. C. or less. The crystallization develops from a region where the element has been introduced in a direction parallel to a substrate. An active region of a semiconductor device is formed in a portion of the crystallized semiconductor layer in such a manner that the relation between the crystal growth direction and the direction in which the electric current of the device is selected in accordance with a desired mobility of the active region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.