Intergrated circuit interconnect via structure having low resistance
US5808361A · kind A · utility
4Cited by
8References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 10, 1997 |
| Grant date | Sep 15, 1998 |
| Priority date | — |
| Expiry date | Feb 10, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Interconnect via structures in a semiconductor integrated circuit having low resistance. The interconnect via structures connect metal layer structures in the semiconductor device and extend down at least one side of the metal layer structures. The interconnect via structures can extend down a second side of the metal layer structures and can extend down the end of the metal layer structures. The interconnect via structures extend beyond the sides and the end of the metal layer structures by a distance u where u is 1/4 to 1/2 F, where F is a feature of the design rule being used to manufacture the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.