Process of etching an oxide layer
US5811357A · kind A · utility
37Cited by
2References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 26, 1997 |
| Grant date | Sep 22, 1998 |
| Priority date | — |
| Expiry date | Mar 26, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A dry etching process for etching an oxide layer on a substrate in which a plasma is created in a gaseous mixture containing C.sub.4 F.sub.8 and C.sub.2 F.sub.6. The dry etch process is useful for etching an oxide layer stopping on a silicon nitride layer on a semiconductor wafer of an integrated circuit structure as it eliminates resist blistering without sacrificing high selectivity to nitride, via wall angle, and/or etch uniformity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.