Methods and apparatus for cleaning surfaces in a substrate processing system
US5812403A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 13, 1996 |
| Grant date | Sep 22, 1998 |
| Priority date | — |
| Expiry date | Nov 13, 2016 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4405
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention provides a method for cleaning a processing chamber. According to a specific embodiment, the method includes steps of depositing a dielectric film on a wafer on a ceramic heater in the processing chamber in a first time period, with the ceramic heater heated to a first temperature of at least about 500.degree. C. during the deposition step; and introducing reactive species into the processing chamber from a clean gas that is input to a remote microwave plasma system during a second time period, with the ceramic heater heated to a second temperature of at least about 500.degree. C. during the introducing step. The method also includes cleaning surfaces in the processing chamber, with cleaning performed by the reactive species. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.