Method of making small pores defined by a disposable internal spacer for use in chalcogenide memories

US5814527A · kind A · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Graham R. Wolstenholme · Boise, US
• Steven T. Harshfield · Emmett, US
• Raymond A. Turi · Boise, US
• Fernando Gonzalez · Boise, US
• Guy T. Blalock · Boise, US
• Donwon Park · Boise, US

Key dates

• Filing date: Jul 22, 1996
• Grant date: Sep 29, 1998
• Expiry date: Jul 22, 2016

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8828

Abstract

A method for fabricating an ultra-small pore or contact for use in chalcogenide memory cells specifically and in semiconductor devices generally in which disposable spacers are utilized to fabricate ultra-small pores or contacts. The pores thus defined have minimum lateral dimensions ranging from approximately 500 to 4000 Angstroms. The pores thus defined may then be used to fabricate a chalcogenide memory cell or other semiconductor devices.