Thin films of ABO.sub.3 with excess B-site modifiers and method of fabricating integrated circuits with same
US5814849A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Jan 27, 1997 |
| Grant date | Sep 29, 1998 |
| Priority date | — |
| Expiry date | Jan 27, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for fabricating an integrated circuit capacitor having a dielectric layer comprising BST with excess B-site material, such as titanium, added. A polyoxyalkylated metal liquid precursor solution is prepared comprising a stock solution of BST of greater then 99.999% purity blended with excess B-site material such as titanium such that the titanium is in the range of 0-100 mol %. A xylene exchange is then performed to adjust the viscosity of the solution for spin-on application to a substrate. The precursor is spun on a first electrode, dried at 400.degree. C. for 2 minutes, then annealed at 650.degree. C. to 800.degree. C. for about an hour to form a layer of BST with excess titanium. A second electrode is deposited, patterned, and annealed at between 650.degree. C. to 800.degree. C. for about 30 minutes. The resultant capacitor exhibits an enlarged dielectric constant with only a small increase in leakage current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.