Method to optimize p-channel CMOS ICs using Q.sub.bd as a monitor of boron penetration
US5817536A · kind A · utility
13Cited by
3References
6Claims
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Key dates
| Filing date | Mar 25, 1996 |
| Grant date | Oct 6, 1998 |
| Priority date | — |
| Expiry date | Mar 25, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28035
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method to monitor boron penetration and optimize process parameters in the fabrication of a semiconductor device have an n.sup.+ or a p.sup.- -polysilicon gate. The charge-to-breakdown Q.sub.BD value is used to monitor the boron penetration into the polysilicon/gate oxide interface. Values of Q.sub.BD for various values of process parameters are determined and optimized values for these process parameters are derived.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.