Inventor · Kanchinakote, IN

Deepak Nayak

59Patents
13h-index
58Co-inventors
87Inventor score

Filing activity: Feb 27, 1990 → Feb 27, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US5617991A Method for electrically conductive metal-to-metal bonding Electricity 258 Expired
US5325265A High performance integrated circuit chip package Electricity 158 Expired
US6194259A Forming retrograde channel profile and shallow LLDD/S-D extensions using nitrogen implants Electricity 124 Expired
US6506640B1 Multiple channel implantation to form retrograde channel profile and to engineer threshold voltage and sub-surface punch-through Electricity 121 Expired
US10339470B1 Techniques for generating machine learning training data Physics 70 Active
US7214629B1 Strain-silicon CMOS with dual-stressed film Emerging Cross-Sectional Technologies 53 Expired
US5824586A Method of manufacturing a raised source/drain MOSFET Emerging Cross-Sectional Technologies 45 Expired
US7429775B1 Method of fabricating strain-silicon CMOS Electricity 34 Expired
US7851313B1 Semiconductor device and process for improved etch control of strained silicon alloy trenches Electricity 24 Active
US9711511B1 Vertical channel transistor-based semiconductor memory structure Electricity 22 Active
US8120075B1 Semiconductor device with improved trenches Electricity 13 Active
US7670923B1 Method of fabricating strain-silicon CMOS Electricity 13 Active
US5817536A Method to optimize p-channel CMOS ICs using Q.sub.bd as a monitor of boron penetration Electricity 13 Expired
US9748335B1 Method, apparatus and system for improved nanowire/nanosheet spacers Electricity 12 Active
US6372590B1 Method for making transistor having reduced series resistance Electricity 12 Expired
US5920104A Reducing reverse short-channel effect with light dose of P with high dose of as in n-channel LDD Electricity 11 Expired
US7423283B1 Strain-silicon CMOS using etch-stop layer and method of manufacture Electricity 9 Expired
US5757204A "Method and circuit for detecting boron (""B"") in a semiconductor device using threshold voltage (""V"") fluence test" Physics 9 Expired
US9941329B2 Light emitting diodes (LEDs) with integrated CMOS circuits Electricity 6 Active
US10388691B2 Light emitting diodes (LEDs) with stacked multi-color pixels for displays Electricity 6 Active
US6051460A Preventing boron penetration through thin gate oxide of P-channel devices by doping polygate with silicon Emerging Cross-Sectional Technologies 5 Expired
US7875543B1 Strain-silicon CMOS using etch-stop layer and method of manufacture Electricity 5 Active
US10726060B1 Classification accuracy estimation Physics 4 Active
US10037981B2 Integrated display system with multi-color light emitting diodes (LEDs) Electricity 4 Active
US10249710B2 Methods, apparatus, and system for improved nanowire/nanosheet spacers Electricity 4 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.