Optical proximity correction method for intermediate-pitch features using sub-resolution scattering bars on a mask
US5821014A · kind A · utility
163Cited by
2References
25Claims
0Family size
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Key dates
| Filing date | Feb 28, 1997 |
| Grant date | Oct 13, 1998 |
| Priority date | — |
| Expiry date | Feb 28, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70441
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for providing scattering bars for optical proximity effect correction on a mask used in a lithographic process. Scattering bar spacing and characteristics are adjusted and varied along with primary feature edge location in order to control CD's of features that are spaced a distance greater than the minimum pitch of a lithographic process but less than a nominal distance for two feature edges having independent scattering bars.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.