Method and apparatus for measuring the metallurgical channel length of a semiconductor device
US5821766A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 20, 1996 |
| Grant date | Oct 13, 1998 |
| Priority date | — |
| Expiry date | Feb 20, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and apparatus for measuring the metallurgical channel length of a semiconductor device includes the steps of determining capacitance of gate to substrate in a multiple MOS transistor pattern and MOS capacitor pattern which have the same gate area; subtracting the capacitance of gate to substrate in a MOS transistor from that in a MOS capacitor for providing a difference curve; determining the overlap length by using the capacitance corresponding to a peak shown in the differences curve; and subtracting two times the overlap length .DELTA.L from the gate length Ldrawn in the MOS transistor for providing the metallurgical channel length.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.