Method for forming low contact resistance bonding pad
US5824234A · kind A · utility
14Cited by
1References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 2, 1996 |
| Grant date | Oct 20, 1998 |
| Priority date | — |
| Expiry date | Oct 2, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/01029
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method for forming a bonding pad having a low contact resistance. The method includes steps of: a) forming a bonding pad structure on a substrate having a metal layer by forming a passivation layer over said metal layer and etching the passivation layer with a fluorine-containing gas by which a fluorine-containing layer is formed on a surface of said bonding pad structure; and b) removing the fluorine-containing layer for reducing a contact resistance of said bonding pad structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.