Method of manufacturing a raised source/drain MOSFET
US5824586A · kind A · utility
45Cited by
6References
8Claims
0Family size
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Key dates
| Filing date | Oct 23, 1996 |
| Grant date | Oct 20, 1998 |
| Priority date | — |
| Expiry date | Oct 23, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/019
Abstract
A method of manufacturing a raised source/drain MOSFET by depositing amorphous silicon on the partially formed MOSFET having the gate and gate oxide spacers formed, ion implanting to form the appropriate source/drain junctions, annealing wherein epitaxial growth takes place in regions where the amorphous silicon is over silicon, and etching the remaining amorphous silicon. A layer of refractory metal is deposited and a second anneal converts the refractory metal overlaying silicon to silicide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.