Stacked capacitor having improved charge storage capacity
US5827783A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 23, 1996 |
| Grant date | Oct 27, 1998 |
| Priority date | — |
| Expiry date | Aug 23, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/714
Abstract
A method of forming a capacitor that has improved charge storage capacity in a high density memory device that has shallow trench isolation regions and a capacitor produced by the method are provided. The method includes the step of forming an oxide spacer that consists of a plurality of oxide layers deposited by two alternating methods of thermal CVD and plasma CVD. After a contact hole is first etched by a plasma etching technique, the hole is again decoratively etched by an etchant such as hydrogen fluoride which has a high selectivity toward oxide layers formed by the plasma CVD method and a low selectivity toward oxide layers formed by the thermal CVD method. As a result, a corrugated side-wall of the contact hole is formed which affords the capacitor cell with an increased surface area leading to an improved charge storage capacity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.