Low temperature formation of low resistivity titanium silicide

US5828131A · kind A · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Cyril Cabral, Jr. · Ossining, US
• Lawrence A. Clevenger · Saratoga Springs, US
• Francois M. d'Heurle · Ossining, US
• James M. E. Harper · Yorktown Heights, US
• Randy W. Mann · Jericho, US
• Glen L. Miles · South Burlington, US
• James S. Nakos · Saint Johnsbury Center, US
• Ronnen Andrew Roy · Ossining, US
• Katherine L. Saenger · Ossining, US

Key dates

• Filing date: Jan 16, 1996
• Grant date: Oct 27, 1998
• Expiry date: Jan 16, 2016

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/0212
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Low resistivity titanium silicide, and semiconductor devices incorporating the same, may be formed by titanium alloy comprising titanium and 1-20 atomic percent refractory metal deposited in a layer overlying a silicon substrate, the substrate is then heated to a temperature sufficient to substantially form C54 phase titanium silicide. The titanium alloy may further comprise silicon and the refractory metal may be Mo, W, Ta, Nb, V, or Cr, and more preferably is Ta or Nb. The heating step used to form the low resistivity titanium silicide is performed at a temperature less than 900.degree. C., and more preferably between about 600.degree.-700.degree. C.