Three-dimensional container diode for use with multi-state material in a non-volatile memory cell
US5831276A · kind A · utility
286Cited by
35References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 22, 1996 |
| Grant date | Nov 3, 1998 |
| Priority date | — |
| Expiry date | Jul 22, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
A vertically oriented diode for use in delivering current to a multi-state memory element in a memory cell. A vertical diode may be disposed in a diode container extending downwardly from a top of a silicon or oxide layer, and may be formed of a combination of silicon and/or metal layers disposed proximate to inner surfaces of a diode container. A multi-state memory element may be formed of a multi-state material, such as a chalcogenide, above a diode to complete a memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.